Nano Lett 2007, 7:2645–2649.CrossRef 27. Tan PH, Dimovski S, Gogotsi Y: Raman scattering of non-planar graphite: arched edges, polyhedral crystals, whiskers and cones. Phil Trans R Soc Lond A 2004, 362:2289–2310.CrossRef
28. Tan PH, Deng YM, Zhao Q, Cheng WC: The intrinsic temperature effect of the Raman spectra of graphite. Appl Phys Lett 1999, 74:1818.CrossRef 29. Li JS, Zhang CR, Li B: Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition. Appl Surf Sci 2011, 257:7752–7757.CrossRef 30. Zhang XW, Boyen HG, Deyneka N, Ziemann P, Banhart F, Schreck M: Epitaxy of cubic boron nitride on (001)-oriented diamond. Nat Mater selleck chemicals llc 2003, 2:312–315.CrossRef 31. Allen MJ, Tung VC, Kaner RB: Honeycomb carbon: a review of graphene. Chem Rev 2009, 110:132–145.CrossRef 32. Tang S, Ding G, Xie X, Chen J, Wang C, Ding X, Huang F, Lu W, Jiang M: Nucleation and growth of single crystal graphene on hexagonal boron nitride. Carbon 2012, 50:329–331.CrossRef 33. Nagashima A, Tejima N, Gamou Y, Kawai T, Oshima C: Electronic dispersion relations of monolayer Saracatinib hexagonal boron nitride formed on the Ni(111) surface. Phys Rev B 1995, 51:4606–4613.CrossRef 34. Wang W-L, Bi J-Q, Sun W-X,
Zhu H-L, Xu J-J, Zhao M-T, Bai Y-J: Facile synthesis of boron nitride coating on carbon nanotubes. Mater Chem Phys 2010, 122:129–132.CrossRef 35. Ci L, Song L, Jin C, Jariwala D, Wu D, Li Y, Srivastava A, Wang ZF, Storr K, Balicas L, Liu F, Ajayan PM: Atomic layers Tideglusib of hybridized boron nitride and graphene domains. Nat Mater 2010, 9:430–435.CrossRef 36. Yue J, Cheng W, Zhang X, He D, Chen G: Ternary BCN thin films deposited by reactive sputtering. Thin Solid Films 2000, 375:247–250.CrossRef Competing interests The authors declare that they have no competing interests. Authors’ contributions YS, CZ, BL, and XX designed the experiments, and YS carried out most of the experimental work and material characterizations.
CZ and BL synthesized the borazine. YS, CZ, BL, GD, and XX discussed the results, and YS drafted the manuscript. All authors have read and approved the final manuscript.”
“Background Recently, resistive random Selleck Stattic access memory so-called RRAM has attracted great attention to the researchers owing to its simple metal-insulator-metal (M-I-M) structure, long endurance, low-power consumption, good data retention, and excellent scalability [1–5]. To observe the acceptable resistive switching behavior, some switching materials such as TaO x [6–8], HfO x [9, 10], and AlO x [11–13] show promise for future applications. Further, to obtain high-density and device scaling, different kinds of device structures have been reported [14–16]. Ho et al.  have fabricated a 9-nm half-pitch RRAM device using WO x material. Chen et al.  has fabricated a 10 × 10 nm2 cross-point device using HfO x material. Kim et al.