Appl Phys Lett 2013, 102:223502.CrossRef 123. Schmelzer S, Linn E, Bottger U, Waser R: Uniform complementary resistive switching in tantalum oxide using current sweeps. IEEE Electron Device Lett 2013, 34:114.CrossRef 124. Lee D, Woo J, Cha E, Kim S, Lee W, Park S, Hwang H: Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM. Microelectron Eng 2013, 109:385.CrossRef 125. Kim S, Kim S-J, Kim KM, Lee SR, Chang M, Cho E, Kim Y-B, Kim CJ, In Chung U: Physical electro-thermal model of resistive switching in bi-layered resistance-change memory. Sci Rep 2013, 3:1. 126. Zhuo VYQ,
Jiang Y, Li MH, Chua EK, Zhang Z, Pan JS, Zhao Osimertinib R, Shi LP, Chong TC, Robertson J: Band alignment check details between Ta 2 O 5 and metals for resistive S63845 mw random access memory electrodes engineering.
Appl Phys Lett 2013, 102:062106.CrossRef 127. Elliman RG, Saleh MS, Kim TH, Venkatachalam DK, Belay K, Ruffell S, Kurunczi P, England J: Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM). Nucl Instrum Methods Phys Res, Sect B 2013, 307:98.CrossRef 128. Yang Y, Choi S, Lu W: Oxide heterostructure resistive memory. Nano Lett 2013, 13:2908.CrossRef 129. Garg SP, Krishnamurthy N, Awasthi A, Venkatraman M: The O-Ta (oxygen-tantalum) system. J Phase Equil 1996, 17:63.CrossRef 130. Birks N, Meier GH, Pettit FS: Introduction to the high-temperature oxidation of metals. Cambridge: Cambridge University Press; 2006. http://www.doitpoms.ac.uk/tlplib/ellingham_diagrams/interactive.php CrossRef 131. Fujimoto M, Koyama H, Konagai M, Hosoi
Y, Ishihara K, Ohnishi S, Awaya N: TiO 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching. Appl Phys Lett 2006, 89:223509.CrossRef 132. Hur JH, Lee M-J, Lee CB, Kim Y-B, Kim C-J: Modeling for bipolar resistive memory switching in transition-metal oxides. Phys Rev B 2010, 82:155321.CrossRef 133. Yoshida C, Kinoshita K, Yamasaki T, Sugiyama Y: Direct observation of oxygen movement during resistance switching in NiO/Pt film. Appl Phys Lett 2008, 93:042106.CrossRef 134. Meloxicam Linn E, Rosezin R, Kugeler C, Waser R: Complementary resistive switches for passive nanocrossbar memories. Nat Mater 2010, 9:403.CrossRef 135. Long S, Lian X, Cagli C, Cartoix X, Rurali R, Miranda E, Jimenez D, Perniola L, Ming Liu M, Sune J: Quantum-size effects in hafnium-oxide resistive switching. Appl Phys Lett 2013, 102:183505.CrossRef 136. Long S, Cagli C, Ielmini D, Liu M, Sune J: Analysis and modeling of resistive switching statistics. J Appl Phys 2012, 111:074508.CrossRef 137. Terai M, Sakotsubo Y, Saito Y, Kotsuji S, Hada H: Effect of bottom electrode of ReRAM with Ta 2 O 5 /TiO 2 stack on RTN and retention. In Tech Dig – Int Electron Devices Meet. Baltimore, MD; 2009:1–4. 138.