The InAs NWs are vertically aligned on the substrate surface and have a homogeneous diameter distribution without tapering and metal droplets on the tops. Our NWs have a larger diameter, shorter length and less number density in comparison with InAs NWs
on Si, which are ascribed to the lack of dangling bond on the graphite surface. The growth was proposed to follow a VS growth mechanism. The surface collection of impinging indium adatoms is the dominant contribution CP-690550 to the axial growth for short NWs, while impinging adatoms on sidewalls and diffusion to the top of the NWs become dominant for the longer NWs. We have also shown that the resulting NWs have mixed pure ZB and WZ insertions. Acknowledgements The authors would like to thank the EPSRC (EP/C001699/1), Lancaster Impact Acceleration Account and the European Graphene Flagship Project for the financial support. References 1. Janssen T-J, Tzalenchuk A, Lara-Avila S, Kubatkin S, Fal’ko VI: Quantum resistance metrology using graphene. Rep Prog GW-572016 chemical structure Phys 2013, 76:104501.CrossRef 2. Hoon YJ, Lee WH, Wu Y, Ruoff R, Fukui T: van der Waals epitaxy of InAs
nanowires vertically aligned on single-layer graphene. Nano Lett 2012, 12:1431.CrossRef 3. Hoon YJ, Fukui T: Controlled van der Waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices. ACS Nano 2011, 9:7576. 4. Shin JC, Kim Depsipeptide order KH, Yu KJ, Hu H, Yin L, Ning C-Z, Rogers JA, Zuo J-M, Li X: In x Ga 1‑x As nanowires on silicon: one-dimensional heterogeneous epitaxy, bandgap engineering, and photovoltaics. Nano Lett 2011, 11:4831.CrossRef 5. Mohseni PK, Behnam A, Wood JD, English CD, Lyding JW, Pop E, Li X: In x Ga 1−x As nanowire growth on graphene: van der Waals epitaxy induced phase segregation. Nano Lett 2013, 13:1153.CrossRef 6. Munshi AM, Dheeraj DL, Fauske VT, Kim DC, van Helvoort AT, Fimland BO, Weman H: Vertically aligned GaAs nanowires
on graphite and few-layer graphene: generic model and epitaxial growth. Nano Lett 2012, 12:4570.CrossRef 7. Kim Y-J, Lee J-H, Yi G-C: Vertically aligned ZnO nanostructures grown on graphene layers. Appl Phys Lett 2009, 95:213101.CrossRef 8. Choi D, Choi M-Y, Choi WM, Shin H-J, Park H-K, Seo J-S, Park J, Yoon S-M, Chae SJ, Lee YH, Kim S-W, Choi J-Y, Lee SY, Kim JM: Fully rollable transparent nanogenerators based on graphene electrodes. Adv Mater 2010, 22:2187.CrossRef 9. Chung K, Lee C-H, Yi G-C: Transferable GaN layers grown on ZnO-coated graphene layers for optoelectronic devices. Science 2010, 330:655.CrossRef 10. Zervos M, Feiner L-F: Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires. J Appl Phys 2004, 95:281.CrossRef 11. Chuang LC, Moewe M, Chase C, Kobayashi NP, Chang-Hasnain C: Critical diameter for III-V nanowires grown on lattice-mismatched substrates. Appl Phys Lett 2007, 90:043115.CrossRef 12.