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the relation between negative-charged Al vacancy and Q f . XZ carried out the TEM analysis and participated in the Q f test. YND performed the film deposition. PZ, XZC, and BYW provided the Beijing Slow Positron Beam and performed the positron BDAR analysis. WJW, YHT, and SZ co-wrote the paper. All authors read and approved the final manuscript.”
“Background Silicon carbide is a promising material for numerous electronic applications due to its wide bandgap, high breakdown electric field, high thermal conductivity, and high saturation velocity [1]. These excellent properties make SiC suitable for high-temperature, high-power, and high-frequency applications. For high-performance and high-frequency devices in these applications, metal/SiC contact plays very important roles. However, the traditional method for fabricating Schottky contact and ohmic contact are so different, and it will unavoidably add to the processing difficulty and cost [2].