CrossRef learn more 4. Lin TS, Lee CT: Performance investigation of p-i-n ZnO-based thin film homojunction buy DihydrotestosteroneDHT ultraviolet photodetectors. Appl Phys Lett
2012, 101:221118.CrossRef 5. Dutta M, Basak D: p-ZnO/n-Si heterojunction: sol-gel fabrication, photoresponse properties, and transport mechanism. Appl Phys Lett 2008, 92:212112.CrossRef 6. Reyes PI, Ku CJ, Duan ZQ, Xu Y, Garfunkel E, Lu YC: Reduction of persistent photoconductivity in ZnO thin film transistor-based UV photodetector. Appl Phys Lett 2012, 101:031118.CrossRef 7. Liu JS, Shan CX, Li BH, Zhang ZZ, Yang CL, Shen DZ, Fan XW: High responsivity ultraviolet photodetector realized via a carrier-trapping process. Appl Phys Lett 2010, 97:251102.CrossRef 8. Zheng QH, Huang F, Ding K, Huang J, Chen DG, Zhan ZB, Lin Z: MgZnO-based metal-semiconductor-metal ��-Nicotinamide ic50 solar-blind photodetectors on ZnO substrates. Appl Phys Lett 2011, 98:221112.CrossRef 9. Han S, Zhang ZZ, Zhang JY, Wang LK, Zheng J, Zhao HF, Zhang YC, Jiang MM, Wang SP, Zhao DX, Shan CX, Li BH, Shen DZ: Photoconductive gain in solar-blind ultraviolet photodetector based on Mg 0.52 Zn 0.48 O thin film. Appl Phys Lett 2011, 99:242105.CrossRef 10. Li M, Chokshi N, Deleon RL, Tompa G, Anderson WA: Radio frequency sputtered zinc oxide thin films with application
to metal-semiconductor-metal photodetectors. Thin Solid Films 2007, 515:7357.CrossRef 11. Lee ML, Chi PF, Sheu JK: Photodetectors formed by an indium tin oxide/zinc
oxide/p-type gallium nitride heterojunction with high ultraviolet-to-visible rejection ratio. Appl Phys Lett 2009, 94:013512.CrossRef 12. Sun F, Shan CX, Wang SP, Li BH, Zhang ZZ, Yang CL, Shen DZ: Ultraviolet photodetectors fabricated from ZnO p–i–n homojunction structures. Mater Chem Phys 2011, 129:27.CrossRef 13. Liang HL, Mei ZX, Smoothened Zhang QH, Gu L, Liang S, Hou YN, Ye DQ, Gu CZ, Yu RC, Du XL: Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors. Appl Phys Lett 2011, 98:221902.CrossRef 14. Mandalapu LJ, Yang Z, Xiu FX, Zhao DT, Liu JL: Homojunction photodiodes based on Sb-doped p-type ZnO for ultraviolet detection. Appl Phys Lett 2006, 88:092103.CrossRef 15. Endo H, Sugibuchi M, Takahashi K, Goto S, Sugimura S, Hane K, Kashiwaba Y: Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate. Appl Phys Lett 2007, 90:121906.CrossRef 16. Du XL, Hou YN, Mei ZX, Liu ZL, Zhang TC: Mg 0.55 Zn 0.45 O solar-blind ultraviolet detector with high photoresponse performance and large internal gain. Appl Phys Lett 2011, 98:103506.CrossRef 17. Nakano M, Makino T, Tsukazaki A, Ueno K, Ohtomo A, Fukumura T, Yuji H, Akasaka S, Tamura K, Nakahara K, Tanabe T, Kamisawa A, Kawasaki M: Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO. Appl Phys Lett 2008, 93:123309.CrossRef 18.